Recently, Samsung Electronics, one of the leading semiconductor technology manufacturers, announced today that it has begun preliminary production of chips based on the 3-nanometer (nm) Gate-All-AroundT (GAA) process node.

2024/05/1406:38:32 technology 1523

Recently, Samsung Electronics , one of the advanced semiconductor technology manufacturers, announced today that preliminary production of node chips based on the 3-nanometer (nm) Gate-All-AroundT (GAA) process technology has begun. .

Compared with Samsung's 5 nanometer (nm), the optimized 3 nanometer (nm) process has improved performance by 23%, reduced power consumption by 45%, and reduced chip area by 16%

Samsung Electronics has achieved GAA "multi-bridge-channel field effect" for the first time "Transistor" (referred to as: MBCFETTM Multi-Bridge-Channel FET) application breaks the performance limitations of FinFET technology, improving energy consumption ratio by reducing the operating voltage level, while also enhancing chip performance by increasing drive current. Samsung first applied nanosheet transistors to semiconductor chips in the field of high-performance, low-power computing, and plans to expand it to the field of mobile processors.

Choi Si-young, general manager of the Foundry Business Unit of Samsung Electronics, said: "Samsung Electronics has been continuously applying new generation process technologies to manufacturing. For example: Samsung's first High-K Metal Gate (HKMG) process, FinFET and EUV, etc. . Samsung hopes to continue to maintain its leading position in the semiconductor industry by taking the lead in adopting the 3nm process "Multi-Bridge-Channel Field Effect Transistor" (MBCFETTM). At the same time, Samsung will continue to actively innovate in competitive technology development and establish a foundation that will help accelerate its development. Achieving technologically mature processes".

Recently, Samsung Electronics, one of the leading semiconductor technology manufacturers, announced today that it has begun preliminary production of chips based on the 3-nanometer (nm) Gate-All-AroundT (GAA) process node. - DayDayNews

As process nodes become smaller and smaller, and chip performance requirements become higher and higher, IC designers need to face the challenge of processing massive amounts of data and verifying complex products with more functions and tighter expansion. To meet these needs, Samsung is committed to providing a more stable design environment to help reduce the time required for the design, verification and approval process, while also improving product reliability. (Source: Samsung Semiconductor)

technology Category Latest News