According to reports, Century Jinguang Semiconductor Co., Ltd., a domestic technology innovation company, has recently successfully developed a high-power silicon carbide module product with specifications of 1200V/600A, becoming the first high-power silicon carbide module in China and will be applied to core components of new energy vehicles. to help reduce the weight of the entire vehicle.
At present, the world-renowned new energy vehicle manufacturer Tesla has taken the lead in applying high-power silicon carbide modules to controllers, which has played a role in miniaturizing devices and lightweighting the entire vehicle. It has set off silicon carbide in the field of new energy vehicles. Material application boom. The third-generation semiconductor silicon carbide has only half the loss of traditional semiconductors and is an important material that supports the lightweighting of new energy vehicles.
The third generation semiconductor material - silicon carbide SiC
The silicon carbide semiconductor industry has huge potential and is currently monopolized by a few developed countries.
Silicon carbide semiconductor is the successor to the first generation semiconductor (silicon Si) and the second generation semiconductor ( gallium arsenide GaAs). The third generation of semiconductor materials. In terms of performance, the third generation semiconductor materials represented by silicon carbide have higher bandgap width , breakdown electric field and thermal conductivity. Their superior performance makes them have great prospects in the field of microwave power devices and are very suitable. It is used to produce radiation-resistant, high-frequency, high-power and high-density integrated electronic devices.
Therefore, Japan, the United States, Germany, Russia and other countries are spending great efforts on research. Currently, it is monopolized and blocked by a few developed countries and has imposed an embargo on our country.
The complete industrial chain of silicon carbide semiconductor includes: silicon carbide - ingot - substrate - epitaxy - chip - device - module, and its downstream applications include semiconductor lighting, electronic power devices, laser and detectors, and other applications.
The silicon carbide semiconductor market is expected to grow rapidly
Silicon carbide devices are being widely used in the field of power electronics. Typical markets include rail transit, power factor corrected power supplies (PFC), wind power (Wind), photovoltaics (PV), and new energy. Cars (EV/HEV), charging piles, uninterruptible power supplies (UPS), etc.
According to data from Yole, a well-known French electronics supply chain market research organization, it is expected that the global SiC application market will reach US$500 million by 2020, and the market size will further reach US$1 billion by 2022, of which 2016-20 The compound growth rate is 28%. At the same time, driven by the downstream electric vehicle industry, the compound growth rate from 2020 to 22 will reach 40%.
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