This newspaper reported that "On the basis of the construction of the National Innovation Center, the third-generation semiconductors should be regarded as one of the first ten industrial chains in our province to achieve the driving role of the Shanxi regional center on the technology chain and industrial chain." On October 11, as the leading construction unit of the National Third-generation Semiconductor Technology Innovation Center (Shanxi), a relevant person in charge of the Second Research Institute of China Electronics Technology Group (hereinafter referred to as "China Electronics and Technology Second Institute") introduced that the National Third-generation Semiconductor Technology Innovation Center (Shanxi) has entered the actual operation stage, and the scientific research team is carrying out key research on core key technologies and has made phased progress.
According to the introduction, the National Third Generation Semiconductor Technology Innovation Center is based on the construction ideas of "integrated planning, distribution layout of multiple places, coordinated innovation" and "stock drives incremental growth". Under the unified guidance of the Ministry of Science and Technology, it was established by China Electronics Technology and relevant provinces and cities in consultation with relevant provinces and cities. Six regional centers are laid out in Beijing, Shenzhen, Nanjing, Suzhou , Hunan, Shanxi and other places, effectively connecting government support and enterprise needs, joining industry leading enterprises, and collaborating with more than 50 scientific research institutions across the country to initially form an innovation pattern of "core + base + network". On September 23, the National Third Generation Semiconductor Technology Innovation Center (hereinafter referred to as "National Innovation Center") held the first meeting of the first council in Beijing, marking that the National Innovation Center has officially entered the actual operation stage.
In June this year, the National Third Generation Semiconductor Technology Innovation Center (Shanxi) was officially unveiled. The Shanxi Regional Center of the National Innovation Center is led by China Institute of Electrical Science and Technology. It has joined hands with advantageous institutions and universities in the province to meet the national third-generation semiconductor strategic needs and combine with the requirements of our province's economic transformation and development, gather innovative elements, and carry out in-depth research and development of key technologies and common technologies of third-generation semiconductors. It will be built into the source of supply of major key technologies, an innovation highland for industrial agglomeration and development, and an co-creation platform for technical services, achievement transformation and innovation and entrepreneurship.
"In accordance with the requirements of the Ministry of Science and Technology and China Electronics Technology, the provincial and municipal platforms of the National Innovation Center have gradually entered the physical operation mode. We have established mixed-ownership entity companies in other co-construction units in the United Nations Innovation Center (Shanxi) region, mainly giving full play to the characteristics of scientific research institutes and companies, gather strength, develop core technologies, incubate scientific and technological achievements, and lead industrial development." According to the relevant person in charge of China Electronics Technology II Institute, as the first batch of "chain owners" enterprises identified by our province, the institute is taking the opportunity of the third-generation semiconductor construction of a trillion-level industrial cluster to create new momentum for innovation and development, and promote our province to become a leader in the innovation and industrial development of the third-generation semiconductor technology.
In mid-September, the "Economic Information Broadcast" column of CCTV Finance Channel has reported on the important breakthroughs made by China Institute of Electrical Science and Technology in the field of third-generation semiconductor equipment. It turns out that the most important link in the third-generation semiconductor silicon carbide industry chain is the preparation of silicon carbide substrate materials, which need to grow at high temperatures above 2500 degrees Celsius and in a vacuum environment. Since the crystal growth process is strict, it puts high requirements on the equipment of silicon carbide single crystal growth furnace. Ten years ago, China Institute of Electrical Science and Technology No. 2 had begun to participate in the research and development of third-generation semiconductor silicon carbide equipment, and successively developed a number of core equipment in the silicon carbide industry chain, including silicon carbide single crystal growth furnace, silicon carbide powder synthesis furnace, silicon carbide crystal annealing furnace, seed crystal bonding furnace, and other core equipment in the silicon carbide industry chain.
At present, in accordance with the development goals of the Shanxi Regional Center, China Institute of Electrical and Technology II has jointly carried out key research and development of 11 core key technologies in the third-generation semiconductor research and development process in accordance with the "posting the list and taking charge", and has made phased progress.
Among them, the laser stripping research team has mastered the principle of laser stripping technology and engineering foundation, and has achieved laser stripping of 4-inch and 6-inch silicon carbide single crystal chips based on the collaborative research and development of process and equipment; the wafer bonding equipment prototype has been successfully developed, and the development of series products has been completed in response to the requirements of different application objects; the silicon carbide single crystal growth furnace has completed the design of the intelligent 8-inch silicon carbide single crystal growth furnace, realizing the domestic replacement of purchased parts; the silicon carbide single crystal growth process research has grown 6-inch qualified silicon carbide crystals with a thickness greater than 35 mm. (Gao Rong)
