(Global TMT June 30, 2022) Sanan Integration, relying on its mature GaAs HBT/p-HEMT process platform, is currently the only domestic company capable of mass-producing WiFi 6E chips. At present, Sanan Integration has reached in-depth cooperation with domestic leading RF companies to achieve mass production of a variety of WiFi 6E front-end modules. The products cover medium and high power levels of 18.5-23.5dBm, with superior TX end linear power and a maximum RX of 1.5dBm. Terminal NF value. Client products have successfully entered the international market, and the two parties are also launching a new round of cooperation on next-generation WiFi products.
Sanan Integrated’s GaAs HBT/p-HEMT shipments have always been leading in China; last August, Sanan Integrated’s filter products also entered the world’s mainstream RF front-end platforms. Sanan Integrated's mature manufacturing management and reliable production capacity guarantee are powerful tools to help customers quickly seize the market. Inheriting Sanan Optoelectronics 's twenty years of compound semiconductor manufacturing management experience, Sanan Integration has developed a mature and comprehensive gallium arsenide HBT/p-HEMT process spectrum to support customers' different application needs in complex communication scenarios. Sanan Integration is facing the future market and actively investing in production capacity. It has built a 2,300-acre manufacturing base in Quanzhou Nan'an Core Valley Park and planned a monthly production capacity of 20,000 pieces of 6-inch gallium arsenide wafers and 256Mu duplexers to implement customer products. and provide reliable support for rapid iteration.
