Officials said that this technology node has achieved the industry's fastest NAND I/O speed: 2.4 GB/s, which is 50% faster than the highest-speed interface data transmission speed provided by Micron's 176-layer process node.

2025/08/1311:46:33 hotcomm 1575

IT Home July 27th news, last night, Micron announced that the world's first 232-layer NAND has been mass-produced at the company's Singapore factory. In the initial stage, it will ship to customers through the Crucial SSD consumer product line in the form of encapsulated particles.

Now, Micron published a post introducing the related technologies of 232-layer NAND.

Officials said that this technology node has achieved the industry's fastest NAND I/O speed: 2.4 GB/s, which is 50% faster than the highest-speed interface data transmission speed provided by Micron's 176-layer process node. - DayDayNews

official said that technology node has achieved the fastest NAND I/O speed in the industry: 2.4 GB/s, is 50% faster than the highest speed interface data transmission speed provided by Micron's 176-layer process node. Compared with the previous generation, Micron's 232-layer NAND has increased the write bandwidth per die by 100%, and the read bandwidth has increased by more than 75%.

In addition, Micron 232-layer NAND introduced the world's first six-plane (6-Plane) TLC production NAND, which is the product with the largest number of planes per die in all TLC flash memory, and each plane has independent reading capabilities. The exquisite appearance of

232 layer NAND not only gives customers design flexibility, but also achieves the highest TLC density ever (14.6 Gb / mm2) , with a unit storage density of 35% to 100% higher than TLC competitors on the market. The 232-layer NAND and a new package size of 28% smaller than Micron's previous generations, the 11.5mm x 13.5mm package makes it the smallest high-density NAND right now, achieving higher capacity in smaller spaces will also help significantly reduce the motherboard space occupied during application.

Micron's 232-layer NAND is also the first product to support NV-LPDDR4 in production, and this low voltage interface saves over 30% per bit transmission compared to past I/O interfaces.

Micron says the 232-layer NAND breakthrough feature will help customers provide more innovative solutions in data centers, thinner notebooks, the latest mobile devices and the entire smart edge.

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