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power semiconductor is the core of electrical energy conversion and circuit control in electronic devices, and is mainly used to change the voltage and frequency in electronic devices, as well as DC AC conversion. Power components are used in circuit systems that have current-voltage and phase conversion.
Basically, power semiconductors can be roughly divided into two categories: power discrete components (Power Discrete) and power integrated circuit (Power IC). Among them, power discrete component products include MOSFETs, diodes, and IGBTs, among which MOSFETs and IGBTs are the most important.
MOSFET and IGBT are mainly used to transform the current with varying voltage and frequency generated by power generation equipment into currents with specific electrical energy parameters through a series of conversion and adjustment to supply various terminal electronic equipment, becoming one of the core components of electronic power change devices.
, and in the global power semiconductor market, the proportion of industrial control is the highest, reaching 34%, followed by the automotive and communications fields, and the consumer electronics account for 20%.
In recent years, the application fields of power semiconductors have expanded from industrial control and consumer electronics to new energy, rail transit, smart grid, variable frequency home appliances and other markets, and the overall market size has shown a stable growth trend. According to IHS Markit forecast, the global power component market size will be approximately US$39.1 billion in 2018, and the market size is estimated to rise to US$44.1 billion by 2021, with an annual composite growth rate of 4.1%.
Source: IHS
, and IC Insights points out that among all kinds of semiconductor power components, the most optimistic products in the future will be MOSFETs and IGBT modules.
MOSFET is a field-effect transistor that can be widely used in analogy circuits and digital circuits. It has the advantages of small on-resistance, low loss, simple driving circuits and good thermal resistance characteristics. It is especially suitable for power control fields such as PC, mobile phone, mobile power supply, vehicle navigation, electric vehicles, UPS power supply, etc.
In 2016, the global MOSFET market size reached US$6.2 billion, and it is estimated that by 2022, the global MOSFET market size will be close to US$7.5 billion, and the annual combined growth rate will reach 3.4%.
As for IGBT, it is a composite semiconductor power element composed of a dual-carrier junction transistor (BJT) and MOSFET. It has the advantages of both high input impedance of MOSFET and low on-resistance of BJT. The IGBT drive power is small, which is very suitable for converter systems with DC voltage of of 600V or above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction transmissions, etc.
Source: IHS, secondary body, MOSFET and IGBT output value (billion US dollars)
As consumers' requirements for charging efficiency gradually increase, mobile phone charging has a fast charging mode, which means that high current and high power charging is achieved by increasing the voltage, but high voltage has safety concerns, and a rectified MOSFET needs to be added to adjust.
later appeared a relatively safe flash charging mode, mainly through low voltage and high current to achieve high-speed charging, which has higher requirements for synchronous rectification of MOSFET.
On the other hand, it is a change in the automobile industry. At present, the development of the automobile industry has moved from traditional cars to electric vehicles. As for the increase in the degree of electronicization of automobiles, the biggest beneficiary is power semiconductors. Among traditional fuel vehicles, power semiconductors are mainly used in start-up, stop and safety fields, with a proportion of only 20%. According to traditional cars, the value of power components is about $70, calculated at the value of semiconductor bicycles at $350.
But entering the generation of electric vehicles, its battery power module uses a large amount of power equipment, and the power equipment contains power semiconductors, with a specific gravity of power components of power vehicles of 40%, and a specific gravity of pure electric vehicles of power components of 55%. According to the value of pure electric vehicle semiconductor bicycles of US$750, the value of power semiconductors is about US$413, about 6 times that of traditional cars.
MOSFET and IGBT international manufacturers control the
MOSFET market. According to IHS statistics, Infineon accounts for as much as 27%, ranking second with ON Semi, with a market share of 13%, and third with 9% of Renesas.
In the field of high-voltage MOSFET with high value content, Infineon is significantly ahead of all competitors with a market share of 36%, while STMicroelectronics and Toshiba are second and third with a market share of 19% and 11%.
Source: IHS
As for the IGBT market, Infineon, Mitsubishi and Fuji Electric are in the leading position, while ON Semi focuses on the low-voltage consumer electronics industry, with a voltage below 600V. The medium and high voltages above 1700V are used in high-speed rail, automotive electronics, smart grids, etc., and are basically monopolized by Infineon, ABB and Mitsubishi.
Source: IHS
MOSFET and IGBT have their own advantages and disadvantages. According to different internal structures, the current that can be achieved is also different. Generally, it is feasible to be as large as KA, but the MOSFET has a voltage withstand not as strong as IGBT.
The advantage of MOSFET is that it can be applied to high-frequency fields, and the MOSFET operating frequency can be applied to RF products ranging from hundreds of KHZ to tens of MHZ. And the IGBT reaching 100KHZ is almost the best job limit.
Finally, if the electronic components need to perform high-speed switching operations, MOSFET has an absolute advantage, mainly because the IGBT has integrated BJT, and the BJT itself has a charge storage time problem, that is, it takes a long time to perform high-speed switching operations.
So overall, MOSFET is suitable for portable rechargeable batteries or mobile devices. As for IGBT, it is suitable for high voltage and high power equipment, such as electric motors, automotive power batteries, etc.
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