(Report Producer/Author: Huaan Securities, Hu Yang)
1. What is the third generation semiconductor technology?
1.1 The third generation of semiconductor substrate material changes has led to a new era of semiconductors
Semiconductor materials are an important part of the upstream of the semiconductor industry chain. Semiconductor materials are divided into manufacturing materials and packaging materials. The manufacturing materials are mainly various components required in the chip process of manufacturing silicon wafers, gallium arsenide (GaAs), silicon carbide (SiC) and other compound semiconductors. Similar materials play a key role in the production and manufacturing of semiconductor products such as integrated circuits and discrete devices. semiconductor manufacturing materials include silicon materials and compound semiconductor materials such as gallium arsenide (GaAs), silicon carbide (SiC), gallium nitride (GaN).
Silicon substrates occupy the main market, and the third generation of semiconductors is expected to set off a revolution in the underlying materials. Silicon (Si) is currently the substrate material with the most mature technology, the widest application range and the largest market share. In recent years, the potential of silicon material has been fully developed. In the fields of high voltage, high frequency and high temperature, silicon carbide and nitrogen are used. The market size of the third-generation semiconductor substrate materials represented by gallium is expected to develop rapidly.
The development of semiconductor substrate materials has gone through three stages so far:
1) The first stage (representative material: Si, Ge): Starting in the 1950s, the first generation of semiconductors represented by silicon (Si) and germanium (Ge) The diode and transistor made of materials have replaced the electron tube , triggering the rapid development of the microelectronics industry with integrated circuits as the core. They are mainly used in low-voltage, low-frequency, low-power partial power devices and integrated circuits. silicon-based semiconductor material is currently the semiconductor material with the largest output and the most widely used. More than 90% of semiconductor products are made of silicon-based materials.
2) Second stage (representative materials: GaAs, InP): Since the 1990s, with the development of the semiconductor industry, the physical bottleneck of silicon materials has become increasingly prominent, with gallium arsenide (GaAs), indium phosphide (InP) ), indium antimonide (InSb), and some ternary compound semiconductors represent the second generation of compound semiconductor materials that have emerged. The electron mobility of gallium arsenide material is about 6 times that of silicon, and it has a direct band gap. Therefore, its devices have high-frequency and high-speed optoelectronic properties compared to silicon-based devices. Therefore, it is widely used in the fields of optoelectronics and microelectronics. It is an ideal material for making Key substrate material for semiconductor light-emitting diodes and communication devices.
3) The third stage (representative materials: SiC, GaN): In recent years, silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond , aluminum nitride (AlN ), the third generation of semiconductor materials with wide bandgap (bandgap width greater than 2.2eV) is gradually emerging. Its dielectric constant, thermal conductivity, maximum operating temperature and other key parameters have significant advantages, which can meet the needs of power electronics technology New requirements for harsh working conditions such as high temperature, high power, high voltage, high frequency and radiation resistance have made it one of the most promising materials in the field of semiconductor materials. At present, leading companies in 5G communications, new energy vehicles, photovoltaics, and other fields have gradually begun to use third-generation semiconductors. After the cost drops, third-generation semiconductors are expected to completely replace silicon-based materials.
In terms of the two dimensions of power and frequency, the first generation of semiconductor materials represents silicon, with a power of about 100Wz, and a frequency of only about 3GHz; the second generation represents gallium arsenide, with a power of less than 100W, but a frequency of 100GHz. Therefore, the previous two generations of semiconductor materials are more complementary to each other. Gallium nitride and silicon carbide, representatives of the third generation of semiconductors, can have power above 1000W and frequency close to 100GHz. The advantages are very obvious, so they may replace the first two generations of semiconductor materials in the future.
1.2 Mainstream preparation process: SiC adopts physical vapor phase transport method, GaN adopts hydride vapor phase epitaxy method
1.2.1 SiC preparation process: PVT has significant advantages and is the first choice for commercialization.
PVT has low cost and is the mainstream route for commercialization.There are three main methods for SiC preparation: physical vapor transport (PVT), top seed solution growth (TSSG) and high temperature chemical vapor deposition (HT-CVD). The top seed solution growth method is mainly used in the laboratory to grow smaller-sized crystals, while the physical vapor transport method and high-temperature chemical vapor deposition method are mainly used in commercial production. Among them, the PVT method requires simple and low-priced equipment to prepare SiC, and the operation and control are relatively easy, so it is the mainstream method of commercial production. PVT principle: Mix high-purity carbon powder and silicon powder according to a specific ratio to form high-purity SiC micro powder and seed crystal. They are placed in the lower part of the crucible in the growth furnace. After the top, the temperature rises to above 2000°C, and is controlled by The temperature at the bottom of the crucible is slightly higher than at the top, creating a temperature difference. SiC micropowder sublimates into gaseous Si2C, SiC2, Si, etc., and then forms a SiC ingot at the lower temperature seed crystal due to the temperature difference.
1.2.2 GaN preparation process: HVPE has a simple process and is the mainstream production method.
HVPE has a simple process and fast growth rate and is a mainstream production route. The preparation of gallium nitride is mainly divided into gas phase method and melt method. The gas phase method is subdivided into hydride vapor phase epitaxy (HVPE) and gas phase transmission method. The melt method is subdivided into high-pressure nitrogen solution method (HNPSG), cosolvent method/dissolved salt method, ammoniothermal method, and pull method. In comparison, the thick film quality and growth rate of the HVPE method are higher, and it is a mainstream method. Principle of HVPE: The entire process is completed in a multi-level temperature zone hot wall reaction system. Metal Ga is placed in a liquid state in a temperature zone of 850 degrees, and then HCl gas is injected from the upper layer of the hot wall to form GaCl gas, and then CaCl is added The gas is transported to the substrate, reacts with ammonia gas (NH3) at a temperature of 1000 degrees to 1100 degrees, and finally generates GaN crystals.
2. What is the development prospect of the third generation semiconductor?
2.1 Market side: The overall output value exceeds 710 billion yuan, and the penetration rate in 2023 is close to 5%.
The penetration rate of third-generation semiconductor materials is increasing year by year, and it is expected to be close to 5% in 2023. According to data from Yole, Si is still the mainstream semiconductor material, accounting for 95%. The penetration rate of third-generation semiconductors is increasing year by year. SiC penetration rate is expected to reach 3.75% in 2023, GaN penetration rate will reach 1.0% in 2023, and the penetration rate of third-generation semiconductors totals 4.75%.
In 2020, the overall output value of my country's third-generation semiconductors exceeded 710 billion, and power electronics and microwave radio frequency continued to grow. According to CASA data, the overall output value of my country's third-generation semiconductor exceeds 710 billion. Among them, the overall output value of semiconductor lighting is expected to be 701.3 billion yuan, a decrease of 7.1% compared to 2019 due to the impact of the new crown epidemic; the output value of SiC and GaN power electronics reached 4.47 billion yuan, a year-on-year increase of 54%; the output value of GaN microwave radio frequency reached 6.08 billion yuan, a year-on-year increase 80.3%. (Report source: Future Think Tank)
2.2 Performance end: The high-voltage and high-frequency fields may realize a comprehensive replacement of silicon-based
SiC MOSFET focuses on the high-voltage field, and GaN MOSFET focuses on the high-frequency field. Based on the two dimensions of power and frequency, we sorted out the physical characteristics and applicable occasions of mainstream power devices: Si-IGBT has advantages in the high-voltage field but is not qualified for the requirements of the high-frequency field, and Si-MOSFET is capable of the high-frequency field but is not suitable for The voltage is limited, and SiCMOSFET perfectly solves the problem of having both high voltage and high frequency on silicon. On the basis of being compatible with high voltage and medium frequency, SiC-MOSFET has become an ideal choice for electric vehicles and charging piles due to its high efficiency and small size. , photovoltaic inverter and other fields (regardless of cost), GaN-MOSFET has great potential in the 5G radio frequency field with its ultra-high frequency characteristics. It is currently mainly used in 5G base station PA and is expected to be expanded to terminal equipment radio frequency (mobile phones, etc.) in the future. , In addition, GaNMOSFET has great application potential in medium and low voltage fields below 1000V, such as fast charging and electric vehicles.
The energy-saving benefits of third-generation semiconductors are evident. In the field of consumer electronics, energy saving is more than 40%; in the field of industrial electromechanical, energy saving is 30%-50%; in the field of high-speed rail, higher power density reduces the size of the moving iron system and saves 20% energy; in the field of photovoltaic inverter , it reduces More than 25% of the loss of photoelectric conversion to ; in the field of smart grid, the power supply efficiency is increased by more than 40% and the power loss is reduced by 60%.
SiC is mainly used in white goods , electric vehicles and industrial applications. In white goods, it is mainly used in home appliances/personal computers, uninterruptible power supplies, etc.; in the field of electric vehicles, it is mainly used in DC/AC inverters, DC/DC converters, etc.; in the industrial field, it is mainly used in power distribution and railway transportation. , photovoltaic industry, motor control , wind power turbines, etc.
GaN is mainly used in the fields of optoelectronics, radio frequency electronics and electronic power. In the field of optoelectronics, it is mainly used in laser displays, LED lighting, etc.; in the field of radio frequency electronics, it is mainly used in satellite communications, mobile terminals, national defense industry, wireless communication base stations, etc.; in the field of power electronics, it is mainly used in power conversion systems and new energy vehicles. With data centers, industrial motors and smart grids, etc.
2.3 Policy and scientific research: Policies continue to focus on third-generation semiconductors, and technological innovation is in full swing.
Countries have successively introduced relevant policies, and third-generation semiconductors are booming. The country continues to issue relevant policies to support the development of third-generation semiconductors. In July 2016, the State Council's "Notice on Issuing the National Science and Technology Innovation Plan for the 13th Five-Year Plan" clearly stated the development of third-generation semiconductor chips; in November 2019, the Ministry of Industry and Information Technology announced the development of third-generation semiconductor chips. Semiconductor products are included in the "Guidance Catalog for the First Batch Application Demonstration of Key New Materials". In December 2019, the "Outline of the Yangtze River Delta Regional Integrated Development Plan" clearly required accelerating the cultivation and layout of the third-generation semiconductor industry and promoting the manufacturing industry. develops with high quality; In July 2020, in order to encourage companies to actively develop integrated circuits, the state exempted and exempted related corporate taxes; in March 2021, the 14th Five-Year Plan specifically proposed the development of third-generation semiconductors; in August 2021, the Ministry of Industry and Information Technology Incorporate third-generation semiconductors into the “14th Five-Year Plan” industrial science and technology innovation-related development plan.
The number of patents in my country is higher than that in the United States, accounting for 22% of the world. At present, there are a total of 23,738 patents in the field of gallium nitride and SiC semiconductors in the world, of which 5,232 are Chinese patents, accounting for 22%, and 2,722 are American patents, accounting for 12%. The total number of Chinese patents is higher than that of the United States. Universities are the overall innovation body in my country, and enterprises are the main innovation entities in the United States. Among the top 10 patents related to gallium nitride and SiC semiconductors in China, universities and research institutes are the main innovation entities, accounting for 60%, while American companies are the main innovation entities, accounting for 80%. That is to say, domestic innovation is still in the research and development stage and is still far away from commercialization. A certain distance.
China and the United States have the same patent fields, but different areas of innovation activity. The top three patent fields in China and the United States are the same, namely H01L21, H01L29 and H01L33. The activity of China's top ten IPC groups is generally higher than 50%, while the technology activity in the United States is the highest at 50%. The hot areas in China are C30B29 and C30B25, while the hot areas in the United States are H01S5 and C23C16.
3, the main players of third-generation semiconductors sorted out
3.1 Industry chain companies sorted out: The layout of the domestic SiC and GaN industrial chains is gradually improved, and the entire industry chain is basically covered.
At present, the domestic listed companies with SiC layout can be divided into from the perspective of the industry chain. Category 5: 1) Focus on substrate materials, such as Tianyue Advanced and Tianke Heda (suspended IPO); 2) Device-side IDM layout, such as China Resources Micro , Star Semiconductor , Wingtech Technology , etc. ; 3) Integrated layout from materials to devices, such as Sanan Optoelectronics; 4) Chip design manufacturers, such as New Clean Energy; 5) Others: Luxiao Technology layout equipment + materials, Micron Company layout epitaxial equipment. From the perspective of the company's original business, it can be divided into three categories: 1) traditional power semiconductor companies ( thyristors / MOSFET / IGBT) extending the layout of third-generation semiconductor SiC, such as Star Semiconductor, Times Electric, etc.; 2) LED chip companies, For example, Sanan Optoelectronics has many years of R&D and production accumulation in the optoelectronic device material GaN, and has taken advantage of the trend to transform into third-generation semiconductors; 3) Companies focusing on materials/equipment, such as Tianyue Advanced and China Microelectronics.
The domestic GaN power semiconductor industry chain has achieved a comprehensive layout. The classification of players in the GaN industry chain is similar to that of SiC. In terms of global layout of GaN power semiconductors, overseas companies have a high leading position in technology and production capacity. Leading overseas companies mainly adopt the IDM model, including German Infineon , American Qorvo, etc.At present, the domestic GaN industry chain is also accelerating its layout and growing rapidly. Domestic companies have implemented layout in the fields of substrate, epitaxy, design, manufacturing, etc., including GaN substrate manufacturer Suzhou Navitas, Dongguan Gallium ; Epitaxy manufacturers Jingzhan Semiconductor and Jiangsu Nenghua; design companies Ampron and HiSilicon; manufacturing companies Sanan Integrated, Haiwei Huaxin , etc. In addition, new entrants are not only traditional power semiconductor manufacturers, but also companies with a background in radio frequency devices or military industry background entering the GaN field, such as Yaguang Technology, which specializes in military electronics, and Guobo, which specializes in TR components and radio frequency modules. electronic.
3.2 Listed companies sorted out: 104 SiC-related companies, 43 GaN-related companies
Currently there are 147 major domestic third-generation semiconductor manufacturers, and a total of 104 companies related to the SiC industry chain, 15 of which are listed. SiC full industry chain companies (production equipment, substrates, epitaxy, devices) include Sanan Integration, China Electronics Technology Institute 55, China Electronics Technology Institute 13, Century Jinguang, and Zhonghong New Crystal. There are 43 companies related to the domestic GaN industry chain, 3 of which have been listed. The only company in the entire industry chain is Inno Secco.
(This article is for reference only and does not represent any investment advice on our part. If you need to use relevant information, please refer to the original text of the report.)
Selected report source: [Future Think Tank]. Future Think Tank - Official website
