Electronic Enthusiast Network reports (Text/Li Ningyuan) Today, MOSFETs are used in everything from power converters to core components of various electronic devices such as memory and CPU. As a semiconductor device, MOSFET can both connect and disconnect the circuit.

Electronic Enthusiast Network reports (Text/Li Ningyuan) Today, MOSFETs are used in everything from power converters to core components of various electronic devices such as memory and CPU. As a semiconductor device, MOSFET can both connect and disconnect the circuit.

Development to the present, MOSFET is mainly used in small and medium power applications such as computer power supplies, household appliances, etc. It has the advantages of small driving power, strong current shutdown capability, fast switching speed, small loss and no secondary breakdown. Although IGBT is currently popular and is a higher-end power device than its predecessor MOSFET, MOSFET still occupies a huge market share in a wide range of medium and low-voltage applications, whether it is consumer electronics, home appliances or embedded systems.

To determine whether a MOSFET is practical, you must first determine the drain-source voltage VDS of the MOSFET, which is the "drain-source breakdown voltage". This is the guarantee that the MOSFET can withstand when the gate is short-circuited to the source and the drain current is 250μA. highest voltage without damage. In addition, the on-resistance needs to be determined. On-resistance is very important for both N-channel and P-channel MOSFETs. In addition, rated current and power dissipation are equally important. The market structure of

MOSFET is similar to that of IGBT. European and American products and Japanese products are the mainstream. European and American products Infineon and ON Semiconductor are firmly in the top two spots, followed by Japanese brands Renesas and Toshiba. Domestic manufacturers such as Yangjie Electronics and China Resources Weibo, Jilin Huawei, etc. are also making rapid substitution momentum in the medium and low voltage field. This issue will start with benchmark products from mainstream European and American manufacturers.

Infineon MOSFET series

Infineon is the world's leading manufacturer of power semiconductor components. After acquiring the American International Rectifier Company (IR) in 2015, Infineon incorporated all IR MOSFET products into its product system to strengthen and expand The product portfolio has been improved to stay at the forefront of the industry. High-quality design and robustness, as well as low overall system cost, are among Infineon's key features.

Using MOSFET transistors N-channel is usually preferred in high current applications. IRF40SC240 is the latest 40 V StrongIRFET power MOSFET from Infineon D2PAK 7pin+.

(IRF40SC240, Infineon)

In this latest 40V MOSFET, it is optimized for high current and low RDS(on). The new D2PAK 7pin package expands interchangeable pin options, greatly enhancing design flexibility. Compared to standard packages, the new series has 13% lower RDS(on) and 50% higher current carrying capacity. The maximum RDS(on) of the IRF40SC240 is only 0.65 milliohms, with a typical value of 0.5 milliohms. The maximum continuous drain current based on packaging limitations is 360A, which is significantly improved compared to the previous series.

The IRF40SC240 not only offers greater flexibility, but also reduced conduction losses at low RDS(on). The higher current capability means a big increase in power density, and the IRF40SC240 is also optimized for 10 V gate drive, providing better performance in noisy applications. Provides immunity to false starts in the environment.

Compared with N-channel devices, the main advantage of P-channel devices is to reduce the design complexity of medium and low-power applications. SPB18P06P-G is Infineon's highly innovative P-channel power MOSFET, which has excellent performance in on-resistance characteristics and quality factor characteristics.

(Infineon)

First let’s talk about a few key parameters. The VDS of SPB18P06P-G is -60V, the maximum RDS (on) is 0.13 ohms, and the current is -18.6A. SPB18P06P-G still does well in numerical indicators. In addition, this series adds an enhancement mode and provides device avalanche ratings. Generally speaking, avalanches, especially repeated avalanches, are not common problems that MOSFET manufacturers will consider when developing new series. Infineon still adds an avalanche rating to this series to prevent users from operating MOSFETs in avalanches. .

ON Semiconductor MOSFET series

ON Semiconductor, like Infineon, is an IDM model. It can independently execute the entire product manufacturing process without OEM, which is beneficial to cost control and improvement of process and quality control.

NTBG020N090SC1 is an N-channel 900V silicon carbide MOSFET owned by ON Semiconductor. SiC MOSFET technology should be mentioned here. Compared with silicon, it will have better switching performance and reliability. Advantages of the NTBG020N090SC1 system include maximum efficiency, higher power density, lower EMI and smaller system size.

(NTBG020N090SC1, ON Semiconductor)

900V The RDS (on) of this series is very low, only 20mΩ (VGS=15V). It also has ultra-low gate charge, with QG(tot) as low as 200 nC. The limited capacitance also drops to an extremely low level under high-voltage conditions, with the Coss value reaching 295 pF. Low on-resistance and compact size ensure low capacitance and gate charge of the device. Efficiency and power density are therefore guaranteed.

ON Semiconductor P-channel series products also perform well in RDS (on) and packaging technology. Ultra-low RDS(on) ensures the improvement of system efficiency, and the advanced 5x6mm packaging technology can also greatly save space and also has very good thermal conductivity.

(P-type MOSFET, ON Semiconductor)

STMicroelectronics MOSFET Family

ST's MOSFET family offers more than 30 package options, including a 4-lead TO-247 package with dedicated control pins for increased switching efficiency, for high currents High performance H2PAK, innovative surface mount package leadless TO-LL, 1-mm high surface mount package PowerFLAT series, medium voltage, high voltage and ultra high voltage power MOSFET series from 2×2mm to 8×8mm are available. Very good heat dissipation capability.

Take a low-voltage MOSFET with a breakdown voltage range of 12 V ~ 30 V as an example. STB155N3LH6 is a newer N-channel 30 V MOSFET product in the ST low-voltage series.

(STB155N3LH6 internal schematic, ST)

This series adopts the sixth generation STripFET DeepGATE technology, and the MOSFET devices under this technology exhibit the lowest RDS(on) among all packages. The RDS(on) of the STB155N3LH6 is only 3mΩ. Compared with the top two low-voltage products in the industry, ST's technical level is still quite good in terms of on-resistance. What is slightly lacking is that the peak current capability is not as good as it. Of course, this slightly inadequate evaluation is just a comparison between Infineon and ON Semiconductor. In the industry, this current carrying level is still at the forefront.

ST's MDmesh process for high-voltage power and STripFET process for low-voltage power ensure that ST's MOSFET products are at the top level in the industry in terms of power processing capabilities. A variety of packaging technologies also provide higher flexibility for its power device products.

European and American MOSFET manufacturers have advanced technology and manufacturing processes, and their quality management is also ahead of other countries and regions. They are the main providers of mid-to-high-end MOSFETs and have long occupied most of the global market share. The next issue will explore the technical characteristics of Japanese MOSFET manufacturers and see what the differences are.