According to statistics, in the first half of 2022, China's new energy passenger cars accounted for 59% of the world's new energy vehicle share, ranking first in the world. my country's new energy vehicle production has ranked first in the world for seven consecutive years. The penetration rate of new energy vehicles in the Chinese market reached 21.6%, and the content of power semiconductors in new energy vehicles reached 55%. For new energy vehicles, cars no longer use the "three major parts" of traditional gasoline vehicles - gasoline engines, fuel tanks or transmission . The "three-electric system" is replaced by batteries, motors, and electronic control systems. In order to achieve energy conversion and transmission, new energy vehicles have added new motor control systems, DC/DC modules, high-voltage auxiliary drives, vehicle charging system OBCs, power management ICs and other components, and the power semiconductor content has been greatly increased.
power semiconductor development process In semiconductor power devices, MOSFET and IGBTh are voltage-controlled switching devices. Compared with current-controlled switching devices such as power diodes, power triacs and thyristors and thyristors and , it has the characteristics of easy driving, fast switching speed, low loss, and has broad application prospects. During the development of discrete devices, power diodes and power transistors were launched in the 1950s and were used in industrial and power systems. From the 1960s to the 1970s, semiconductor power devices such as thyristors developed rapidly. In the late 1970s, planar power MOSFETs developed; in the late 1980s, trench power MOSFETs and IGBTs were gradually launched, and semiconductor power devices officially entered the era of electronic applications. In the 1990s, super-junction MOSFETs gradually emerged, breaking the traditional "silicon limit" to meet the application needs of high power and high frequency. In 2008, Infineon (Infineon ) took the lead in launching shielded gate power MOSFETs, and the performance of semiconductor power devices was further improved. For the domestic market, most discrete device products such as power diodes, power transistors, , and thyristors have been domestically produced, while high-end discrete device products such as IGBT, power MOSFET, especially super junction MOSFETs, still rely heavily on imports to a large extent due to the complexity of their technology and processes, and there is huge room for import substitution in the future.
Emerging fields drive the global power device industry to accelerate growth. According to WSTS statistics, MOSFET accounts for the highest proportion in the entire power device market, about 40%, followed by power diodes (30%), with IGBTs following about 25%, thyristors account for about 5%, and MOSFETs and IGBT markets accounting for a high proportion. ICIInsights pointed out that among all kinds of semiconductor power devices, the most powerful growth products in the future will be MOSFET and IGBT module . According to Yole, benefiting from the rapid growth of downstream emerging application fields such as new energy, the market size of MOSFETs, IGBTs and their modules is expected to reach US$13.2 billion in 2023, with an average annual compound growth rate of 4.05%.
IGBT and MOSFET have different internal structures, the IGBT input voltage is high and the MOSFET input voltage is low, which also determines the different application fields. MOS tubes are suitable for scenarios with smaller output power, and IGBTs are suitable for scenarios with larger output power. MOSFET is used in high-frequency power fields such as switching power supply , ballast , high-frequency induction heating, high-frequency inverter welding machine , communication power supply; IGBT is mainly used in high-voltage fields such as welding machine , inverter , inverter, electroplating electrolytic power supply, ultra-audio induction heating, and electric drive. According to the different working carrier , MOSFET can be divided into "N type" and "P type", also known as NMOS and PMOS. IGBTs are also divided into N-type and P-type. The working principle of MOS tube is to use VGS to control the amount of "induced charge" to change the condition of the conductive channels formed by these "induced charges", and then achieve the purpose of controlling the drain current. According to different device structures, it can be divided into trench type MOSFET, super junction MOSFET, shielded gate MOSFET, etc.
IGBT is the most promising sub-track with power devices. It is an insulated gate bipolar transistor. It is a composite fully controlled voltage-driven power semiconductor device composed of BJTh and MOS. It is mainly used for inverter inverter inverter and other inverter circuits. It converts alternating current and DC , and variable current . It combines the advantages of high input impedance and low conduction voltage. It is equivalent to the "CPU" in the field of power electronics and is also the heart of new energy applications. IGBT has a cathode, anode and a control pole. When turned off, has a very large impedance . There is a small resistance when turned on. By turning on or off the control pole, the on and off between the cathode and the anode is controlled.
IGBT is a key support project in the country's 16 major technological breakthrough projects. The industry can be roughly divided into four links: chip design, wafer manufacturing, module packaging, and downstream applications. Among them, the technical breakthrough in the design link is slightly more difficult than other power devices. The capital expenditure in the manufacturing link is more important than that in the Datong . The packaging link has high requirements for product reliability, and the application link has a long customer verification cycle. Overall, IGBT belongs to a segmented track with high barriers. As downstream applications continue to raise new challenges, IGBT structures have been innovating and developing, evolving towards better performance.
As the trend of automobile electrification becomes increasingly obvious, the demand for automotive power devices has also increased. As the current mainstream automotive-grade power devices, IGBT performs very well in the automotive market. Jibang Consulting stated in the "2019 China IGBT Industry Development and Market Report" that the cost of IGBT in new energy vehicles accounts for about 10% of the cost of the entire vehicle. Based on the above information, it can be predicted that by 2025, the market size of China's automotive IGBT will reach RMB 21 billion. In addition, the cost of IGBT modules accounts for about 20% of the cost of charging piles. By 2025, the domestic IGBT market size for charging piles will reach 10 billion yuan. By observing the above data, it can be roughly inferred that in the next few years, China's new energy vehicle market will be a must-fight for global IGBT manufacturers. Support for new energy vehicles in various fields of society will promote the prosperity and development of China's IGBT industrial chain .
MOSFET device is the product with the largest market share in the power device field.
power MOSFET was first launched in the 1970s and has become the most widely used power transistor in the world. Compared with old technologies such as bipolar power transistors, they offer many advantages in linear and switching applications. These advantages include greatly improved switching characteristics, ease of parallel connection, no secondary breakdown effect, and a wider safe work area (SOA). MOSFETs are voltage-driven transconductance devices. The different doping methods of silicon that make up the MOSFET die divide MOSFET into two major technical categories, namely planar and trench type, the die consists of many independent units or planar bands in parallel and are connected together by mesh gates.
According to CICC data, in 2020, the global MOSFET market size reached US$8.067 billion. In 2021, driven by the global market, especially in China's 5G infrastructure and 5G mobile phones, PCs and cloud servers , electric vehicle , new infrastructure and other markets, the global MOSFET growth rate will grow at a relatively high rate. It is expected that from 2021 to 2025, the annual growth rate of MOSFET will not be less than 6.7%, and will reach US$11.847 billion by 2025. At present, the global MOSFET market is mainly occupied by overseas manufacturers. The top ten manufacturers in the world are mainly European, American or Japanese companies. Among the local Chinese companies, the growing Chinese local China Resources Microelectronics , Wingtech Technology acquired Anshi Semiconductor , and Silan Micro can also be included. Due to the wide range of applications, the downstream MOSFET market is generally scattered, and the market can accommodate enough companies to develop. From Silan Micro and China Resources Micro , we can see that Chinese local companies are growing rapidly and their market share is constantly increasing. In the future, we will see more local companies growing, especially in the subdivided high-pressure fields.
summary
power semiconductor application field has expanded from a single industrial control field to many fields such as new energy vehicles, power generation, variable frequency home appliances, etc. Under my country's dual carbon policy, the demand for power semiconductors in new energy, new infrastructure and photovoltaic fields has shown geometric growth.With the increase of automotive electronic components, the applications of power semiconductor components and even MOSFETs are also increasing. New energy vehicles are one of the most important application areas in the downstream application fields of IGBT in China, but my country's IGBT industry still has a huge supply and demand gap, and "domestic substitution" will be one of the main paths for the future development of the IGBT industry.
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