With the continuous development of the information industry and the continuous progress of chip process technology, microelectronic devices have gradually become smaller, integrated and high-powered, and the heat dissipation problem has become a bottleneck restricting the further


With the continuous development of the information industry and the continuous progress of the chip process technology, microelectronic devices have gradually become smaller, integrated and high-powered, and the heat dissipation problem has become a bottleneck restricting the further development of microelectronic devices. Due to the low thermal conductivity (300 W m-1 K-1) of traditional electronic packaging materials can no longer meet the heat dissipation needs of high-power electronic devices, and it is urgently necessary to develop a new generation of electronic packaging materials with high thermal conductivity and low thermal expansion coefficient. In recent years, diamond particle-reinforced aluminum-based (diamond/Al) composite materials have high thermal conductivity, adjustable thermal expansion coefficient and low density, which has attracted widespread attention from researchers. At present, the highest thermal conductivity of diamond/Al composite materials is only 770 W m-1 K-1. Failure to fully utilize the high thermal conductivity of diamond. How to further improve the thermal conductivity of diamond/Al composite materials is a key problem mainly solved in this field.

Recently, Professor Zhang Hailong from Beijing University of Science and Technology Professor Zhang Hailong from Xi'an Jiaotong University Wu Haijun and Professor Zhao Lidong from Beijing University of Aeronautics from Beijing University of Aeronautics from to achieve simultaneous optimization of high interface thermal conductivity, large-particle diamond particles, high diamond volume fraction and high density, and obtain a diamond composite with a thermal conductivity up to 1021 ± 34 W m-1 K-1 (Figure 1). This is the highest value of the thermal conductivity of diamond particle-enhanced metal-based composite material . The research results of are entitled Realizing ultrahigh thermal conductivity in bimodal-diamond/Al composites via interface engineering published in Materials Today Physics (2022, 28, 100901).

1 Paper link:

https://doi.org/10.1016/j.mtphys.2022.100901

Research work uses two-particle diamond particles to increase diamond volume fraction and realize the densification preparation of large-particle diamond particles. By optimizing the discontinuous in-situ carbide interface layer to improve the interface thermal conductivity (Figure 2), and using the synergy of multiple factors, a breakthrough has been made in the thermal conductivity of diamond/Al composite materials. The composite material also has a low thermal expansion coefficient (3.40 × 10-6 K-1) matching the semiconductor material , a high high-temperature thermal conductivity and stable thermal cycling performance (Figure 3). It can effectively dissipate heat for high-power microelectronic devices, and is expected to replace existing electronic packaging materials and promote the development of electronic packaging technology.

Figure 1. (a) Diamond/Al composite material achieves excellent thermal physical properties: simultaneously realizes the optimization of high interface thermal conductivity, large-particle diameter diamond particles, high diamond volume fraction and high density; (b) Comparison of thermal conductivity with literature.

Figure 2. Diamond/Al composite materials simultaneously achieve high interfacial thermal conductivity, large-particle diamond particles, high diamond volume fraction and high density optimization scheme: (a) Two-particle diamond particles increase diamond volume fraction and realize densification preparation of large-particle diamond particles; (b) Discontinuous Al4C3 interface layer achieves high interfacial thermal conductivity.

Figure 3. Thermal physical properties of Diamond/Al composite materials: (a) Thermal conductivity of composite materials prepared by diamond particles of different particle sizes; (b) Thermal expansion coefficient in the range of 298-673 K and the semiconductor materials GaN, metal Al, and diamond; (c) Thermal conductivity of specific density is compared with diamond/Cu, diamond/Ag composite materials, and high thermal conductivity; (d) Thermal conductivity is compared with diamond/Cu composite materials, metal Cu and Al; (e) Thermal conductivity changes with the number of thermal cycles in the temperature range of 218-423 K.

*Thanks to the author team for their strong support for this article.

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