One of the cutting-edge technological breakthroughs: SiC single crystal substrate independent technology system
China has developed a 6-inch conductive SiC substrate and a high-purity semi-insulating SiC substrate. Shandong Tianyue Company, Beijing Tianke Heda Company and Hebei Tongguang Crystal Company have carried out technical cooperation and transformation with Shandong University , Institute of Physics, Chinese Academy of Sciences and Institute of Semiconductor, Chinese Academy of Sciences , to form an independent technical system on SiC single crystal substrate technology.
2. The second breakthrough in cutting-edge technology: The world's first "gallium nitride chip" production base
Chinese technology enterprise Innosaike (Suzhou) Semiconductor Co., Ltd. has achieved technological breakthroughs, and has completed mass production on the alternative material "silicon-based gallium nitride", a production line has been established, and mass production of 8-inch silicon-based gallium nitride wafers has been completed. It is reported that this is the world's first "gallium nitride chip" production base. At present, Chinese companies have mastered mature technologies. Once gallium nitride is used to manufacture chips, the power will be directly increased by 900 times compared to silicon-based chips.
The third breakthrough in cutting-edge technology: carbon nanotube material-carbon transistor
Chinese Academy of Sciences Academician Chinese Academy of Sciences Peng Lianmao and Professor Zhang Zhiyong led the carbon-based nanotube crystal research team to break through the bottleneck of carbon-based semiconductor equipment manufacturing on May 26, 2020, to manufacture carbon-based nanotube material-carbon transistors with high-purity semiconductor arrays, and to be the first to achieve a breakthrough in carbon-based chip manufacturing technology in the world. Carbon-based chips have once again become global hotspots. Carbon-based chips do have the strength to challenge silicon-based chips in many aspects. It is worth mentioning that compared with silicon-based chips, carbon-based chips have significant advantages of lower cost, less power consumption and higher efficiency. According to relevant reports, compared with traditional silicon-based chips, Chinese carbon-based chips are not only faster when processing big data, but also save at least 30% of power consumption.
The R&D team of Beijing Yuanxin Carbon-based Integrated Circuit Research Institute recently successfully overcomes the problem of preparing carbon-based semiconductor material . As we all know, semiconductor materials are indispensable for manufacturing high-performance chips. Many countries in the world generally use silicon as raw material to manufacture semiconductors and . Now my country has successfully broken through the carbon-based semiconductor preparation technology, which means that my country will have the ability to independently produce chips. Moreover, compared with silicon-based semiconductors, carbon-based semiconductors have low cost, high efficiency and low power consumption, making them more suitable for promotion to more fields.
The fourth breakthrough in cutting-edge technology: "China Core" Kirin 970
"China Core" Kirin 970 before Huawei , China's core has made the world start to look at it with admiration. Chinese technology giant Huawei has installed 5.5 billion transistors in a chip of 100 square millimeter . The strongest in the United States is only 3.3 billion, and the technology giant in Qualcomm 3.1 billion! It is also equipped with the world's first quasi-5G baseband and supports LTE Cat.18. What's important is that Huawei has achieved mass production on 18. It is worth mentioning that this chip has surpassed any mobile phone chip in terms of parameters and processes in the world. What is important is China's independent research and development!
The fifth breakthrough in cutting-edge technology: 22 nano key process technology
China Review News Agency, Hong Kong, July 9th / The Integrated Circuit Pilot Process R&D Center of the Institute of Microelectronics, Chinese Academy of Sciences has achieved important breakthroughs in the pilot research and platform construction of 22-nanometer key process technology. For the first time in China, the post-high K process was used to successfully develop 22-nanometer long MOSFETs containing advanced high K/metal gate modules, with good device performance.
According to " China Science Daily ", since this work adopts process methods and processes consistent with industrial production and has the conditions for transfer to the industry, it has formed a practical role in promoting the technological upgrading of my country's integrated circuit industry.At the same time, the pilot process R&D center has built a process platform that can carry out technical research and development of 22nm and below. Although it is 22nm technology, under the circumstances at that time, it marked China's participation in an international club for the research and development of high-end integrated circuit pilot processes, which is of great significance.
The sixth cutting-edge technology breakthrough: 8-inch high-power chip production line
Shandong, China's first 8-inch high-power chip production project, officially completed the full-line equipment debugging, and successfully opened the line in Jinan BYD Semiconductor Co., Ltd. . This chip production line has been 100% domestically produced. It is worth mentioning that this 8-inch high-power chip production line is of great significance. It not only has completely independent intellectual property rights, but also has the relevant technology reached the international advanced level. Importantly, Jinan BYD Semiconductor Co., Ltd. can also design different products and match the corresponding manufacturing processes. In addition, the localization of this production line will also effectively alleviate the current continued tight chip supply in the new energy vehicle industry.
Jinan BYD Semiconductor Co., Ltd. is a "platform" that was jointly invested by BYD , Jinan Hi-Tech Finance and Jinan Manufacturing Group to make up for the shortcomings in chip industry applications.
With the efforts of all parties, the 100% autonomy of the 8-inch high-power semiconductor chip production line finally greatly breaks the dilemma of domestic automotive power semiconductor devices being controlled by others.
also accelerates the process of domestic production of China's core power chips and promotes the new energy vehicle industry to go on track. It is worth mentioning that in the mainstream mid-to-high-end automotive chip devices market, 90% of the devices relied on imports.
The seventh cutting-edge technology breakthrough: Key application technologies for graphene energy storage materials
, Lanzhou University , and Fangda Carbon, developed the "graphene crosslinked activated carbon composite film, preparation method and supercapacitor electrode" was previously officially authorized by the National Intellectual Property Office invention patent. This marks an important breakthrough in China's graphene energy storage material application technology.
As we all know, graphene has strong electrical conductivity and is a zero-distance semiconductor with very good optical properties and thermal conductivity. It is hailed as the "king of new materials" in the industry. Although graphene is widely present in nature, due to the many technical difficulties in the separation and application of graphene, there are many technical obstacles in the mass production and application of graphene new materials.
Scientific researchers from Fangda Carbon Graphene Research Institute of Lanzhou University introduced graphene into modified activated carbon for the first time, breaking through the key technology of large-scale mass production of graphene, and successfully producing new graphene materials with excellent conductivity and high structural stability, solving the problem of poor conductivity of traditional activated carbon electrode materials, and it is expected to produce supercapacitors with higher energy storage capacity. According to the test data, supercapacitors produced using this graphene composite material will have a capacity of 50% higher than that of commercial activated carbon materials, and will show broad application prospects in clean energy storage such as wind energy and photovoltaic power generation, as well as long-term energy supply of high-power equipment such as rail transit and mobile communication base stations.
The eighth breakthrough in cutting-edge technology: key technologies for organic semiconductors and flexible electronics
Chinese Academy of Sciences researchers developed organic semiconductors and flexible electronics technologies. This technology will propose a new concept, latticeizing symmetrical molecules and polylattice. This is undoubtedly a major breakthrough in China's semiconductor materials, especially for the future development of chips. This breakthrough in semiconductor technology will also bring good news to the future development of our chips, or cause a chip revolution in the future. For China, we should have confidence that Chinese scientists can manufacture powerful chips in the future and gain world recognition. It is worth mentioning that this breakthrough in key materials is just a starting point, which will make the United States less blockade.
Organic semiconductors and flexible electronic technology are carriers with great potential for future information industry and intelligent manufacturing, and are the key materials for chip manufacturing. Previously, China has been blocked by foreign technology due to long-term technology blockade in these aspects. The emergence of organic nanopolymer semiconductors will provide new solutions for plastic electronics, and at the same time provide a new direction for the development of Chinese chips, so that China will no longer be restricted by foreign semiconductor materials, breaking the blockade of Western countries on China.
The nine-grade technological breakthrough: Key technologies for zinc tellurium single crystal rods and wafers
Anhui Chengyu Semiconductor Materials Technology Co., Ltd. previously obtained the inspection report of the third-generation cutting-edge semiconductor materials zinc tellurium cadmium single crystal rods and wafers. Its conclusions and data show that the zinc tellurium cadmium single crystal rods and chips manufactured by Chengyu New Materials are in the leading and top-notch ranking in the domestic industry in terms of comprehensive parameter performance such as infrared transmittance , product yield, crystal rods and chip size specifications, especially 3-inch full single wafers, and some indicators rank and even lead the international technical level.
It is worth mentioning that the Institute of Semiconductors of the Chinese Academy of Sciences is a public institution directly under the of the State Council of China. It is a comprehensive research institution integrating semiconductor physics, materials, devices and their applications. It has high authority in China and is called "the locomotive leading the development of semiconductor science and technology in my country."
zinc telluride cadmium, the English name cadmium zinc telluride, abbreviated as CZT. This substance does not exist in nature. It is artificially grown from three elements of tellurium, zinc and cadmium (including other trace additive substances) to form single crystal . It is a third-generation cutting-edge strategic semiconductor material. It is the most advanced and excellent material for detectors such as room temperature mid-infrared detection, X-ray detection, gamma ray detection, nuclear radiation and high-energy rays.
In military use, zinc tellurium cadmium semiconductor materials are mainly to greatly improve the infrared detection performance and imaging clarity of the military equipment. Currently, more than 90% of the international military equipment search and discover targets through infrared detection. This material has many innovative and subversive functions and performances in the military and civilian fields. A few advanced countries in the world that can be produced and manufactured have listed it as a strategic and regulated product, especially the dual blockade of technology and products on my country.
The tenth breakthrough in cutting-edge technology: the first commercial 12-inch fully automatic wafer probe station
, a subsidiary of Changchun Institute of Optical and Mechanical Engineering, Chinese Academy of Sciences, , Changchun Guanghua Microelectronics Equipment Engineering Center Co., Ltd. ( Guanghua Microelectronics ) previously announced the successful development of the first commercial 12-inch fully automatic wafer probe station in China. A breakthrough was made on a 12-inch fully automatic wafer probe. Becoming the first commercially available equipment in my country means that the localization of chip packaging and testing equipment in my country has been greatly improved.
wafer probe table product is one of the important testing equipment in the semiconductor industry. It is used for wafer testing after wafer processing and before the packaging process. It is responsible for the conveying and positioning of wafers, so that the grains on the wafer come into contact with the probes in turn and test one by one. After detection, probe station records chips whose parameter characteristics do not meet the requirements and removes them before entering the subsequent process, thereby greatly reducing the manufacturing cost of the device. It is worth mentioning that China's Guanghua Microelectronics officially launched the research and development of 12-inch fully automatic probe table products in 2015, and has successively broken through six key technologies: the design of a fully automatic loading robot, the precision positioning control technology of a large-stroke micron-level XY mobile platform, the precision control technology of high-stiffness and high-stability probe contact Z-direction mobile platform, the precision measurement and alignment technology of wafer and probe based on image recognition, the information processing and computer control technology of large data volume, and the wafer bearing disk technology of high planarity and high thermal stability.
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