Heterogeneous integration of β-Ga2O3 with high thermal conductivity SiC substrate can effectively solve the heat dissipation problem of gallium oxide high power electronic device .
Recently, Researcher You Tiangui, Researcher Ou Xin, and Xi'an University of Electronic Science and Technology Professor Han Genquan and others published a research paper in Science China Materials. Through high-temperature hydrophilic bonding and ion beam stripping technology, a 2-inch high-quality (201) β-Ga2O3 single crystal thin film was transferred to a 4H-SiC substrate.
Key points of this article:
1) In order to understand the physical mechanism of ion beam peeling off β-Ga2O3 film, the evolution of hydrogen injection β-Ga2O3 surface bubbles and the pressure changes inside the bubbles during this process were systematically studied.
2) Using finite element simulation to predict the appropriate bonding temperature, by performing high-temperature hydrophilic bonding of β-Ga2O3 and 4H-SiC wafers at a temperature of 96 °C, the thermal stress on the heterogeneous interface during ion beam stripping is effectively reduced, and the debonding of the β-Ga2O3/4H-SiC bonding pair is prevented to achieve the transfer of the film.
3) X-ray diffraction results show that the transferred β-Ga2O3 film has a narrow diffraction peak of half-high width, which is 79.2 arcsec.
4) After chemically mechanical polishing of the film, an aurora-smooth surface was obtained, with a root mean square roughness of only 0.1 nm.
β-Ga2O3/4H-SiC heterogeneous materials prepared using high-temperature hydrophilic bonding combined with ion beam stripping technology will become a practical platform for the development of high-performance β-Ga2O3 power devices.
Article information
Shen Z., Xu W., Chen Y., et al. Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic waffle bonding at elevated temperatures. Sci. China Mater. (2022).
https://doi.org/10.1007/s40843-022-2187-2
