Last January, Micron began mass-producing the 4th generation 1a DRAM chip before Samsung Electronics, which announced the industry's first 176-layer NAND flash memory at the end of 2020, when Samsung Electronics and SK Hynix were still focusing on 128-layer NAND flash memory.

IT Home November 4th News, BusinessKorea reported that Micron Technology has recently handed over its low-power dual data rate 5X (LPDDR5X) samples based on the 5th generation 10nm (1b or 12nm to 13nm) process to major smartphone manufacturers.

Micron did not disclose the specific specifications of the new product, but said that compared with the previous version, the new product's energy efficiency has been improved by 15%, and the number of bits stored in a single area has increased by 35%.

IT Home has reported that currently, the three major manufacturers of Samsung Electronics , SK Hynix and Micron occupy more than 90% of the global DRAM market. According to market research firm Omdia, Samsung Electronics ranked first with a market share of 43.3% in the second quarter, with SK Hynix (28.1%) and Micron (23.6%) following.

In January last year, Micron began mass-producing the 4th generation 1a DRAM chip before Samsung Electronics, which announced the industry's first 176-layer NAND flash memory at the end of 2020, when Samsung Electronics and SK Hynix were still focusing on 128-layer NAND flash memory.

Micron announced in May that it will start mass production of 1b DRAM chips in 2022. Considering that Samsung Electronics and SK Hynix plan to mass-produce 1b DRAM products early next year, Micron is very likely to become the first company to mass-produce 1b DRAM.

It is worth mentioning that Samsung Electronics and SK Hynix will apply EUV lithography technology to 1a DRAM products, but Micron will continue to use argon fluoride laser technology to produce 1b DRAM, and the company plans to start applying the EUV process from the 6th generation 10-nano chips.