Recently, TSMC has determined to build a 100-hectare factory in the China Science and Technology Park in Taichung , with a total investment of up to NT$800 billion-1 trillion (approximately US$28.9 billion to US$36.1 billion). This investment includes future 2nm process factories, and the subsequent evolved 1nm process factories will also be located in this park.
The industry expects that TSMC’s 2nm process will be in trial production in 2024 and mass production in 2025, followed by the 1nm process. In addition, after 1nm, TSMC will enter a newer generation of "Ami" process (Ami is one-tenth of a nanometer). The Ami generation process intends to settle in and Kaohsiung , but TSMC has not confirmed it.
TSMC’s old rivals Samsung and Intel are not sitting still.
Samsung head Lee Jae-yong Shortly after his visit to the United States, Samsung officially announced that it would build a chip production base in Texas, costing US$17 billion, and would be put into production as soon as 2024.
Intel was slightly behind in the process technology before. After experiencing high-level shocks, it recently announced a plan to invest 30 billion ringgit (approximately US$7.1 billion) in Malaysia . It will be built in Malaysia in the next 10 years. The production line is closed and tested, with the intention of returning to the poker table. From the perspective of market share, TSMC undoubtedly has the upper hand, but Samsung and Intel have also begun to increase investment. The chip shortage caused by the epidemic is regarded as a rare overtaking opportunity, and the current expansion is just a sign of the subsequent arms race. gun.
Sina Technology News on December 28, foreign media reported that TSMC is launching the research and development and mass production of 2nm process according to the original plan. It is reported that the construction of TSMC 2nm factory has been put on the agenda. The
2nm factory is located in the Zhongke Park in Taichung and is expected to achieve mass production in 2027. It is the second 2nm wafer factory after the Hsinchu Park.
It is worth mentioning that TSMC is moving much faster than expected. The company is not only planning for the 2nm process, but also has plans for 1nm chip related matters.
According to news from Fast Technology on December 29, industry insiders predict that the plan to build a factory in Taichung will reserve the possibility for the future 1nm process.
If all goes well, TSMC will build a 1nm fab in Taichung.
According to recent news, TSMC has confirmed that it will build a 100-hectare factory in the Zhongke Park in Taichung, with a total investment of US$28.9 billion to US$36.1 billion. This investment may be for the future operation of the 2nm process and the subsequent 1nm process. Preparing the factory area. After the completion of the
factory, it is expected that the annual electricity consumption will reach 750,000 kilowatts, and the annual power generation capacity of a local generating unit is 550,000 kilowatts.
In other words, almost 1.5 units are needed throughout the year to meet the power demand of TSMC's new factory. There are currently only 10 generating units in total in the local area.
2nm: MBCFET
FinFET ( fin field effect transistor ) was always good until the process dropped to 5nm.
When reaching the atom level (3nm is 25 silicon atoms lined up), FinFET begins to leak electricity and may no longer be suitable for further process levels.
On the 2nm process, TSMC did not directly use the GAAFET (surround gate field effect transistor) that Samsung planned to use on the 3nm process, that is, nanowire (nanowire), but expanded it into MBCFET (multi-bridge channel Field effect transistor), also known as nanosheet.
GAAFET is a field effect transistor surrounded by gates. Depending on the design, a full-gate FET can have two or four active gates.
By applying a voltage to the gate you can control the current between the source and drain, switching it from 0 to 1 and creating a binary logic for the processor.
from GAAFET to MBCFET, from nm line to nm sheet, can be regarded as a leap from two dimensions to three dimensions, which can greatly improve circuit control and reduce leakage rate.
2nm adopts the MBCFET architecture based on the gate surround (GAA) process, which can solve the physical limit problem of current control leakage in FinFET due to process shrinkage.
1nm: "Bismuth" secret weapon
In May of this year, an international joint research team led by Professor Kong Jing of MIT (MIT) explored a new direction: using atomically thin material bismuth (Bi) instead of silicon. Efficiently connect these 2D materials to other chip components.
should also fall into this park. Previous news has shown that TSMC's 2nm process will be trial-produced in 2024 and is expected to achieve mass production in 2025, followed by the 1nm process. At the same time, after TSMC implements the 1nm process technology, it will enter the era of "angmmeter" process (an angstrom is one-tenth of a nanometer).
But it is worth noting that before, both TSMC and Samsung said they would mass-produce 3nm process chips next year, but now there is news that TSMC’s 3nm trial production failed! IBM said it has developed its first 2nm chip, so this When will 2nm chips be mass-produced? The highest process is still at 5nm, and the first one to use 5nm chips is the iPhone 12 series.
The industry expects that TSMC’s 2nm process will be in trial production in 2024 and mass production in 2025, followed by the 1nm process. In addition, after 1nm, TSMC will enter a newer generation of "Ami" process (Ami is one-tenth of a nanometer). The Ami generation process intends to settle in Kaohsiung, but TSMC has not confirmed it.
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