Fountain has seized the third-generation semiconductor silicon carbide (SiC) chip manufacturing and then deployed key substrate manufacturing technologies. Substrates and epitaxial account for more than 70% of the cost of silicon carbide, which is more important to the performance of electric vehicle power components and has deep investment value. Hon Hai takes the key to technology, thereby reducing the manufacturing cost of silicon carbide components.
Hon Hai Group, which is actively deploying in the electric vehicle field, acquired Wanghong Zhuke 6-inch chip factory for NT$2.52 billion in August last year and made a silicon carbide module chip manufacturing. With Hongyang Semiconductor as the main body, it is expected to complete the production line construction by the end of this year and will be launched in 2023.
Hon Hai knows that silicon carbide components will be the key to improving the performance of electric vehicle power modules, especially substrate manufacturing is related to the quality of silicon carbide materials. It has recently participated in Shengxin Materials' fundraising case to ensure the stable supply of key materials for the substrate of the silicon carbide supply chain.
Hon Hai Chairman Liu Yangwei announced at the shareholders' regular meeting at the end of May that the 1200V/800A power module will be mass-produced in 2024, and the 1200V third-generation semiconductor silicon carbide components will be used in the group's vehicle chargers, charging piles and DC transformers, etc., which also accelerates Hon Hai Group's determination to lay out silicon carbide substrate manufacturing technology.
However, industry insiders pointed out that the difficulty of manufacturing the third-generation semiconductor silicon carbide not only includes epitaxial, but the key lies in the production of high-quality substrates. According to the analysis of the sub-series foreign legal person, the difficulty of the epitaxial technology of silicon carbide lies in the high requirements for temperature and pressure control technology, slow crystal growth speed and high crystal form. Only a few single crystal silicon carbide with crystal structures can be used as semiconductor materials.
Xie Mingxun, general manager of Shengxin Materials, a related enterprise in Guangyun Group, pointed out that the technical threshold for silicon carbide growth is high, including long time, short length and high purity requirements. It can only grow 2 cm of carbonated crystalline silicon rods in about 7 days.
In addition, silicon carbide processing technology is also very difficult. According to the legal person, the processing process of silicon carbide single crystals is mainly divided into cutting, thinning, grinding, polishing, etc. At present, the global silicon carbide manufacturing and processing technology is still not mature, and major manufacturers have their own knowledge-how; and to achieve the high performance of silicon carbide substrates, developing high-surface quality silicon carbide chip processing technology is the key.
Mastering silicon carbide substrate manufacturing is significantly helpful in reducing the cost of silicon carbide components for electric vehicles. According to the Institute of Industrial Intelligence (MIC), the substrate and epitaxial account for about 50% and 25% of the cost of silicon carbide components, respectively, and the total proportion of the two is 75%.
Sub-series foreign legal person analyzed that the cost of substrate accounts for as high as 47% of the total cost of silicon carbide components, the cost of crystal growth accounts for 23% of the total cost of silicon carbide, and the total cost of substrate and crystal growth reaches 70%. The substrate is the most investment-worthy link in the manufacturing process of silicon carbide components.
Xie Mingxun pointed out that silicon carbide substrates are mainly composed of two major specifications: conductive type and semi-insulating type. Among them, conductive type silicon carbide substrates are mainly used in electric vehicles, rail transit and other fields. High-quality silicon carbide substrates belong to the oligopoly market, accounting for nearly 50% of the cost of silicon carbide components, and are the key material for silicon carbide components.
Major global manufacturers are actively deploying silicon carbide substrates, and the company conducted MIC analysis shows that large manufacturers of conductivity-type silicon carbide substrates include Wolfspeed, ROHM and STMicroelectronics (STM), and semi-insulated silicon carbide substrates include Wolfspeed, Showa Denko, ROHM, Qorov, Onsemi and NXP.
In order to reduce costs, major manufacturers are also actively converting 8-inch substrates from 6 inches. The legal person expects that this can reduce the cost of silicon carbide components by about 20% to 35%. Moreover, the 8-inch silicon carbide substrate is thicker, which can cut more substrate sheets, which also helps reduce the manufacturing cost of silicon carbide components.
Chinese manufacturers are also moving very fast. Asian foreign legal entities pointed out that including Tianke Heda, China Electronics Technology, Zhongke Steel Research, Luxiao Technology, etc., have begun mass-producing conductive silicon carbide substrates; Sanan Optoelectronics, Tony Electronics, Dongguan Tiancheng, etc. will also mass-produce conductive silicon carbide substrates from 2023 to 2024; Jingsheng Mechanical and Electrical, Tianyue Advanced and other manufacturers plan to mass produce 6-inch conductive silicon carbide substrates in 2026.
In comparison, Taiwan's silicon carbide substrate supply chain still has a lot of room for growth, currently including Global Crystal, Shengxin Materials, and Hermes-Epitek to accelerate the layout of related products.
(Reporter: Zhong Rongfeng; First image source: Hon Hai Research Institute)
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